Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

By L. Thomas, G. Jan, Jian Zhu, Huanlong Liu, Yuan-Jen Lee, S. Le, R. Tong, K. Pi, Yu-Jen Wang, D. Shen and 8 more. 2014

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Emerging Memory Technologies: Recent Trends and Prospects (2016, methodology): “The current trend of STT-MRAM cell design is to switch from the inplane MTJ [Figure 1(a)] to the perpendicular MTJ [Figure 1(b)] to allow better scalability, longer retention, and lower Jc [9], [10].”
Ultra-Fast Perpendicular Spin–Orbit Torque MRAM (2015, result): “5 ns can be reached, associated with a write current of about 180 μA, which is similar to the best results obtained so far for current perpendicular STT-MRAM technology [42], [43].”
Spin-transfer torque magnetic memory as a stochastic memristive synapse (2014, background): “The most recent realization use structures where the magnetic layers magnetizations are perpendicular to the structure, which reduces programming current [37]–[39].”