Layer-dependent resonant Raman scattering of a few layer MoS2

By B. Chakraborty, H. Matte, A. Sood, C. Rao. 2013

464 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d66b25a27eb34c6827fb7f43ab3819ff962668c1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Edmund J. R. Kelleher
2. R. I. Woodward
3. F. Torrisi
4. Meng Zhang
5. R. Howe
6. Tawfique Hasan
7. G. Hu
8. Qing Zhang

In Materials Chemistry

1. Edmund J. R. Kelleher
2. R. I. Woodward
3. F. Torrisi
4. G. Hu
5. R. Howe
6. Meng Zhang
7. Tawfique Hasan
8. Qing Zhang

Citations in the corpus

• Few-layer MoS 2 saturable absorbers for short-pulse laser technology: current status and future perspectives [Invited] (2015, background): “On the other hand the A1g mode blue shifts as it is less sensitive to the interlayer coupling [60, 61] while it is sensitive to adsorbates.”
• Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films (2015, background): “Contrary to previous studies [79,86,91,93,101,103], which simply assign the peak at ~645 cm as A1g (M) + LA (M), K.”
• Few-layer MoS2: a promising layered semiconductor. (2014, background): “The A1g mode on the other hand is less affected by interlayer interactions.(72) The A1gmode is very sensitive to adsorbates on the MoS2 surface 73 and electron doping.”
• Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering (2014, unknown): “Nanoscale 5, 9572-9576 (2013). 18 Jin, T., Kang, J., Kim, E. S., Lee, S., & Lee, C. Suspended single-layer MoS2 devices. J. Appl. Phys. 114, 164509 (2013). 19 Komsa, H. P., Kurasch, S., Lehtinen, O., Kaiser, U., & Krasheninnikov, A. V. From point to extended defects in two-dimensional MoS2: Evolutio”