Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy
By G. Viera, S. Huet, L. Boufendi. 2001
251 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d4f1f6d976beef4062c2efa3e5fa9ddae31a1f23
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Electrical, Thermal, and Mechanical Characterization of Silicon Microcantilever Heaters (2006, unknown): “spatial resolution in diamond structures [32], silicon [33]–[35], III–V semiconductors [36]–[39], and polysilicon MEMS [40].”
- Size dependence of nanostructures: Impact of bond order deficiency (2007, methodology): “Theoretical results: Si-1 was calculated using correlation length model [465]; Si-3 (dot) and Si-4 (rod) were”