Electronic transport in Ta2O5 resistive switch

By T. Sakamoto, K. Lister, N. Banno, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono. 2007

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State of the art of metal oxide memristor devices (2016, background): “For example, a recent in situ electronic imaging of devices under programming suggested that cationic conducting channels may be composed of nano-island structures rather than co-continuous filaments [39, 40].”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, unknown): “Gex Sy W: [9, 87, 14, 49, 88, 48, 44, 95, 16] W: [87] Gex Sey W: [9, 49, 72, 50, 15, 43] W: [87] Pt: [51] Ni: [49, 45, 94, 96] Ge–Te TiW: [90] TaN: [38] GST Mo: [91] As–S Au: [89] Znx Cd1−x S Pt: [39, 93] Cu2S Pt: [36, 46, 35] Ti: [41]a, [58]b Ta2O5 Pt: [85, 36, 60] Ru: [86] SiO2 Co: [84] W: [52, 92”