Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides
By D. Dimitropoulos, Ritesh Jhaveri, R. Claps, J. Woo, Bahram Jalali. 2005
193 citations recorded by the source corpus.
The lifetime of photogenerated carriers in silicon-on-insulator rib waveguides is studied in connection with the optical loss they produce via nonlinear absorption. We present an analytical model as well as two-dimensional numerical simulation of carrier transport to elucidate the dependence of the carrier density on the geometrical features of the waveguide. The results suggest that effective carrier lifetimes of ⩽1ns can be obtained in submicron waveguides resulting in negligible nonlinear absorption. It is also shown that the lifetime and, hence, carrier density can be further reduced by application of a reverse bias pn junction.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d430996d42fd65fed0787a2ee5553d4cb33a9ca8
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In Electrical and Electronic Engineering
- Bahram Jalali
- Y. Liu
- Sasan Fathpour
- D. Dimitropoulos
- Hon Ki Tsang
- Özdal Boyraz
- Varun Raghunathan
- Michal Lipson
In Materials Chemistry
- Bahram Jalali
- D. Dimitropoulos
- Özdal Boyraz
- Varun Raghunathan
- Sasan Fathpour
- Juan Carlos García-Escartín
- Miguel Herrero-Collantes
Citations in the corpus
- Nonlinear optical properties of silicon waveguides (2008, background): “because they determine the rate of diffusion of carriers away from the optical mode confinement region [61].”
- Silicon Photonics (2006, methodology): “The sample was cleaved (forming mirrors) and pumped optically.”
- Raman-based silicon photonics (2006, methodology): “CW operation was achieved by using a reverse bias p-n junction to sweep out the TPA generated free carriers, an approach that was previously proposed in 2004 [22], [23], [29].”