Nanoscale resistive memory with intrinsic diode characteristics and long endurance

By Kuk-Hwan Kim, S. Jo, Siddharth Gaba, Wei Dang Lu. 2010

177 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d38e2e0e9ffc9f360d0627320c60a6aa5096ca6d

How researchers see this paper

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In Electrical and Electronic Engineering

1. Yuan Xie
2. N. Jouppi

Citations in the corpus

• NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory (2012, background): “A projected plan by ITRS for 2024 for emerging NVM, i.e., PCRAM and ReRAM, highlight endurance in the order of 10 15 or more write cycles [15].”