Electronic structure of the amorphous oxide semiconductor a‐InGaZnO4–x : Tauc–Lorentz optical model and origins of subgap states
By T. Kamiya, K. Nomura, Hideo Hosono. 2009
221 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/d369bb0c5f063c73af2d571b224202fa51509c43
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In Electrical and Electronic Engineering
- Hideo Hosono
- T. Kamiya
- K. Nomura
- Jae Kyeong Jeong
- Jang Yeon Kwon
- John F. Conley
- Elvira Fortunato
- Pedro Barquinha
In Materials Chemistry
- Hideo Hosono
- T. Kamiya
- K. Nomura
- Jae Kyeong Jeong
- Jang Yeon Kwon
- John F. Conley
- Elvira Fortunato
- Pedro Barquinha
In Polymers and Plastics
Citations in the corpus
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, methodology): “Simply speaking, the CB structure is explained well by the Tauc-Lorentz (TL) model [ 45 ] but non-localized tail-states exist in the subgap region [45], [52]‐[54], [56].”