Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

By Deep Jariwala, Vinod K. Sangwan, D. Late, James E. Johns, V. Dravid, T. Marks, Lincoln J. Lauhon, Mark C. Hersam. 2013

395 citations recorded by the source corpus.

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d3676ac48c2592679252faf72fe88da87fe71fb7

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In Materials Chemistry

1. Debdeep Jena
2. N. Ma

Citations in the corpus

• Few-layer MoS2: a promising layered semiconductor. (2014, neutral): “real-life mobility has been the focus of multiple studies.(82,100,109,110,112,113,119,121,201,205,207) 211 High-κ”