On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

By D. Yan, Hai Lu, Dongsheng Cao, Dunjun Chen, Rong Zhang, Youdou Zheng. 2010

137 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/d2e7019109604db4eee9b62da3a8c399755c2676

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1. A. Rahman
2. Nandita DasGupta
3. Sreenidhi Turuvekere
4. Naveen Karumuri
5. A. Bhattacharya
6. A. DasGupta

Citations in the corpus

• Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling (2013, methodology): “To understand the reverse leakage mechanism, PF emission is considered as has been reported earlier [11], [12].”