A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide
By Xichun Luo, Saurav Goel, Robert L. Reuben. 2012
176 citations recorded by the source corpus.
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material. Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (∼2.9 times that of silicon) followed by the 4H-SiC (∼2.8 times that of silicon) whereas 6H-SiC (∼2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC.
Subfields: Biomedical Engineering, Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/d24ff9960f5d23bd4249c66ff974f7e270fe8c0a
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Citations in the corpus
- Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process (2013, methodology): “Such transformations in silicon are irreversible in nature and are metallic rather than semiconducting or insulating [40].”
- Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates (2020, background): “As shown in figure 2, Luo et al [18] compared the nano-cutting of 3CSiC, 4H-SiC and 6H-SiC.”
- Diamond machining of silicon: A review of advances in molecular dynamics simulation (2015, unknown): “While this was found to be true in several experimental studies, this is not the case observed during several nanoscale friction based simulation studies where cutting forces were found dominant over thrust forces [5, 149].”
- Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding (2024, background): “The Tersoff potential is a three-body potential function that can accurately describe the length, angle, and energy of a bond between atoms, thereby providing a realistic description of covalent bonded materials [60, 61].”