Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

By J. Dauber, A. Sagade, M. Oellers, Kenji Watanabe, Takashi Taniguchi, D. Neumaier, Christoph Stampfer. 2015

139 citations recorded by the source corpus.

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ Hz making our graphene sensors highly interesting for industrial applications.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d1f26a875cc70531f22e11a0497928690eddd1ed

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In Atomic and Molecular Physics, and Optics

  1. James Towfik Teherani
  2. Sekhar Babu Mitta
  3. Ankur Nipane
  4. James C. Hone
  5. Min Sup Choi
  6. Won Jong Yoo
  7. Changsik Kim
  8. Fida Ali

In Electrical and Electronic Engineering

  1. James Towfik Teherani
  2. Sekhar Babu Mitta
  3. Ankur Nipane
  4. James C. Hone
  5. Min Sup Choi
  6. Won Jong Yoo
  7. Changsik Kim
  8. Fida Ali

In Materials Chemistry

  1. Olga Kazakova
  2. James C. Hone
  3. C. Melios
  4. V. Panchal
  5. C. Giusca
  6. K. Novoselov
  7. Herre S. J. van der Zant
  8. A. Castellanos-Gómez

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