The hot pick-up technique for batch assembly of van der Waals heterostructures

By F. Pizzocchero, L. Gammelgaard, B. S. Jessen, J. Caridad, Lei Wang, James C. Hone, Peter Bøggild, T. Booth. Nature Communications, 2016

646 citations recorded by the source corpus.

The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield. For the monolayer devices, we found semiclassical mean-free paths up to 0.9 μm, with the narrowest samples showing clear indications of the transport being affected by boundary scattering. The presented method readily lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmospheres, while the ability to assemble pre-patterned layers paves the way for complex three-dimensional architectures. The reliable assembly of two-dimensional materials into van der Waals heterostructures is a critical step towards nanoscale electronic integration. Here the authors present a technique for batch fabrication of graphene/boron nitride stacks with clean interfaces and high-yield.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/78c8a45a7cebf72c747d1ab418a0b36546174aa6

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors (2018, methodology): “Preparation of graphene/h-BN/MoS2/h-BN stacks The graphene/h-BN/MoS2/h-BN stack was fabricated with a bottom-up assembly method involving multiple wet and dry transfers [23, 47, 48].”
Electrical characterization of 2D materials-based field-effect transistors (2020, background): “To avoid and minimize the formation of residues at the interface during the stacking of such materials, alternative polymers, such as poly(propylene) carbonate, can be used [146].”