Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
By H. Saito, K. Nishi, S. Sugou. 2001
158 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/d1d377df9ad27d664c241fc4c03a1ffedaeed6ee
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In Electrical and Electronic Engineering
Citations in the corpus
- Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m (2007, background): “oped: the former uses the (3 1 1) B surface [5], [6], and the latter one is based on the optimization of QD on (1 0 0) oriented substrates.”
- InP based lasers and optical amplifiers with wire-/dot-like active regions (2005, unknown): “Nishi et al [23] reported the first lasing operation in 1998 on an excited dot transition at 1.4 µm, while the first room temperature lasing in pulsed operation at the ground state (1.6 µm) was reported in 2001 by Saito et al [28] with a threshold current density of 660 A cm−2 in a 50 µm wide and 2.”
- Room-temperature operation of InAs quantum-dash lasers on InP [001] (2001, background): “Therefore, the energy difference between the ground-state and the excited-state is approximately 32 meV, which is smaller than the value of 55 meV for the energy difference between the ground-state and the excited-state for InAs QD on InP B substrates reported previously [12].”