Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

By H. Tsuchida, M. Ito, I. Kamata, M. Nagano. 2009

152 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/d0423fa15f4b91b769a5f0fddfed51d9b02fe315

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In Electrical and Electronic Engineering

1. S. Shikata

Citations in the corpus

• Single crystal diamond wafers for high power electronics (2016, background): “In addition, it is known that some of the TSDs can be converted to Frank partial dislocations by sophisticated epitaxial growth technology [50].”