Fundamentals of flexoelectricity in solids

By P. Yudin, A. Tagantsev. Nanotechnology, 2013

687 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cf52271a594390db50e5bd441460db7de6288542

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Harold S. Park
2. Yunseok Kim
3. Timon Rabczuk
4. Boris I. Yakobson
5. H. Ghasemi
6. Bora Kim
7. Daehee Seol
8. Huajian Gao

In Materials Chemistry

1. Rui Huang
2. Teng Zhang
3. Huajian Gao
4. Harold S. Park
5. Yong Zhu
6. J. Bunch
7. K. Liechti
8. Evan J. Reed

Citations in the corpus

• A level-set based IGA formulation for topology optimization of flexoelectric materials (2017, background): “Pi = pi jkε jk + μi jkl ∂ε jk ∂xl (2) where the electric polarization exhibits a linear response to the gradient of mechanical strain [5].”
• Non-piezoelectric effects in piezoresponse force microscopy (2017, background): “10(b) and (c).[108, 109, 113, 114] Because flexoelectricity is related with the strain gradient, its effect becomes more significant in thin films and other nanostructures through, e.”
• A review on mechanics and mechanical properties of 2D materials—Graphene and beyond (2016, background): “Isolating the FE effect completely from the PE effect is difficult and experimental methods for measuring FE coefficients often give results that are orders-of-magnitude different from theoretical predictions [263].”