Field-induced resistive switching based on space-charge-limited current

By Yidong Xia, Weiye He, Liang Chen, Xiangkang Meng, Zhiguo Liu. 2007

176 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ce632eb6f7dcd53a913e94ec1dc302aa91a48bc3

Citations in the corpus

• Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, unknown): “relationships can be used to judge the underlying mechanism of resistive switching [12].”