Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays

By S. An, J. H. Chae, G. Yi, G. Park. 2008

157 citations recorded by the source corpus.

We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50mA, respectively. The source of the enhanced light output is also discussed.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cd739d375645171ed24533601a2bed0dcb156d7d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Zhong Lin Wang
2. Peidong Yang
3. Woong Kim
4. E. Lai
5. Sheng Xu

In Electronic, Optical and Magnetic Materials

1. Zhong Lin Wang
2. Sheng Xu
3. Peidong Yang
4. Woong Kim
5. E. Lai
6. R. Dharmasena
7. S. R. P. Silva
8. Chengkuo Lee

In Materials Chemistry

1. Zhong Lin Wang
2. Sheng Xu
3. Peidong Yang
4. Woong Kim
5. E. Lai
6. Younan Xia
7. M. Tyona
8. Yoshio Bando

Citations in the corpus

• One-dimensional ZnO nanostructures: Solution growth and functional properties (2011, background): “ZnO had a transmittance of over 90% in the visible range [414], so self-absorption by the nanowires should not be a major concern.”
• Vertical nanowire array-based light emitting diodes (2008, methodology): “[24] whilst Chiu et al.”