Vertical nanowire array-based light emitting diodes

By E. Lai, Woong Kim, Peidong Yang. 2008

182 citations recorded by the source corpus.

Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.

Subfields: Biomedical Engineering, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1a2b7da0f4057e8e4fd9c529a5a56a32fb68ebd8

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In Biomedical Engineering

1. Ting Xie
2. Yadong Li
3. Dingsheng Wang

In Materials Chemistry

1. Yadong Li
2. Dingsheng Wang
3. Ting Xie
4. S. Duan
5. Rongming Wang
6. Kuan Yew Cheong
7. K. Tan

Citations in the corpus

• Nanocrystals: Solution-based synthesis and applications as nanocatalysts (2009, background): “[6] Lai, E.”
• Zinc oxide light-emitting diodes: a review (2019, unknown): “In a similar work, reported by Lai et al.(99) from UC”