Electroluminescence in n‐ZnO Nanorod Arrays Vertically Grown on p‐GaN

By W. Park, G.‐C. Yi. 2004

679 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cae2c05251934ada29aa06e1918100a9b2217848

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Peidong Yang
2. Wei Dang Lu
3. Zhong Lin Wang
4. J. Lu
5. Jang-Won Kang
6. Zhiyong Fan
7. Seong-Ju Park
8. Woong Kim

In Electronic, Optical and Magnetic Materials

1. Zhong Lin Wang
2. Peidong Yang
3. Chunrui Wang
4. Zhiyong Fan
5. W. Park
6. J. Lu
7. Pai-chun Chang
8. G. Yi

In Materials Chemistry

1. Zhong Lin Wang
2. Zhiyong Fan
3. J. Lu
4. Peidong Yang
5. Chunrui Wang
6. W. Park
7. Sheng Xu
8. G. Yi

Citations in the corpus

• Vertical nanowire array-based light emitting diodes (2008, methodology): “ZnO nanowire arrays have been fabricated on p-type GaN thin fi lms [11 13] and p-type Si substrates [14].”
• ZnO nanorods: synthesis, characterization and applications (2005, background): “Prototype devices that have been demonstrated include field effect transistors (FETs), p−n junctions, Schottky diodes and electroluminescent nanodevices based on ZnO nanostructures [27, 115, 116].”
• Recent Advances in ZnO-Based Light-Emitting Diodes (2010, methodology): “Various approaches for growing ZnO nanostructures have been developed by many means, such as MOCVD [122]–[124], CVD [125], the solution”
• One-dimensional ZnO nanostructures: Solution growth and functional properties (2011, background): “It has been demonstrated to have enormous applications in electronic, optoelectronic, electrochemical, and electromechanical devices [3–8], such as ultraviolet (UV) lasers [9, 10], light-emitting diodes [11], field emission devices [12–14], high performance nanosensors [15–17], solar cells [18–21], ”