MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4
By William Liu. 2001
319 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c95477c62e52c549aca774fdb7bbbd88fd3fe104
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- The Recycling Folded Cascode: A General Enhancement of the Folded Cascode Amplifier (2009, background): “Equation (9) is a simplified form of other complex models [8] and [9] to aid derivations.”
- PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation (2006, background): “The arguments leading to this conclusion are presented in [3], [7], [21], and [30].”
- An MOS transistor model for RF IC design valid in all regions of operation (2002, background): “The induced gate noise is not implemented in all compact models yet (except for MOS Model 9 that includes the induced gate noise but without the correlation and BSIM4 [ 55 ]).”