Trap densities in amorphous-InGaZnO4 thin-film transistors

By M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, Hideo Hosono. 2008

292 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c8e9034f780828dee05b0f2e9422bcc99a3a2c54

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1. Sungwook Park
2. Y. Jeon
3. Sangwon Lee
4. Sungchul Kim
5. D. M. Kim
6. Jun‐Hyun Park
7. Dae Hwan Kim
8. K. Jeon

Citations in the corpus

• Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics (2010, background): “of the free carrier density was assumed to be negligible [1], [2].”