Undoped AlGaN/GaN HEMTs for microwave power amplification
By L. Eastman, V. Tilak, J. Smart, B. Green, E. Chumbes, R. Dimitrov, Hyungtak Kim, Oliver Ambacher, N. Weimann, T. Prunty and 3 more. 2001
368 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c89d65976b9e2d9b7f5dddf2adbb9cf8e9425ab6
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC (2004, background): “The current drive capability of GaN HEMTs is also good due to very high sheet carrier density (1 cm ) and high saturation velocity (1.2 cm s) [ 6 ].”
- Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination (2003, methodology): “The nitride heterostructures used in this study consist of typical layer structures of AlGaN barrier layer (30‐35% Al, 250‐300 A)‐GaN buffer layer (1‐2 m)/nucleation layer/substrate grown along the -axis by metalorganic chemical vapor deposition (MOCVD) technique [ 1 ], [11].”