A new spin on magnetic memories.

By Andrew D. Kent, Daniel Christopher Worledge. Nature Nanotechnology, 2015

789 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c81878ac3b054e2c1c41df7188303d0627eb0d74

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Pietro Gambardella
2. J. Sinova
3. T. Jungwirth
4. A. Manchon
5. I. Miron
6. Kevin Garello
7. A. Thiaville
8. J. Železný

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Abu Sebastian
3. H. Philip Wong
4. M. Le Gallo
5. Abbas Rahimi
6. Geethan Karunaratne
7. Luca Benini
8. Evangelos Eleftheriou

Citations in the corpus

• Stochastic p-bits for Invertible Logic (2016, background): “1, Pinning currents for super-paramagnets are at least an order of magnitude smaller than the critical switching currents of stable magnets [43].”
• Memory devices and applications for in-memory computing (2020, background): “NaTuRe NaNoTecHNology This non-volatile accumulative behaviour, in spite of its nonlinear and stochastic nature, can be exploited in several applications, such as training deep neural networks, where the conductance values need to be incrementally modified.”
• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “Other consequences of the identical read and write current paths contribute to the limitations of the STTMRAMs (Kent and Worledge, 2015).”
• Two types of all-optical magnetization switching mechanisms using femtosecond laser pulses (2016, background): “Thus, this all-optical switching is of great interest and has the potential to be implemented in spintronic devices like STT based memories [14, 15] or heat-assisted magnetic recording (HAMR) [16, 17].”
• In-memory computing with resistive switching devices (2018, background): “Due to its higher stability and better endurance, STT-MRAM devices appear to be the best device option to implement TRNGs.”
• Magnetism, symmetry and spin transport in van der Waals layered systems (2021, neutral): “…successfully controlled in a certain number of 2D vdW magnets, the access to out-of-equilibrium regimes in such materials by using electric currents and other means presents formidable challenges, but also holds paramount potential for future spintronic memory and logic applications 6,119–121 .”