High-Power Modular Multilevel Converters With SiC JFETs
By Dimosthenis Peftitsis, Georg Tolstoy, Antonios Antonopoulos, Jacek Rabkowski, Jang-Kwon Lim, Mietek Bakowski, Lennart Angquist, Hans-Peter Nee. IEEE transactions on power electronics, 2010
164 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c58059b5bc0a9f6eb8ca1a436cdc818b28764c84
How researchers see this paper
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In Electrical and Electronic Engineering
- Hans-Peter Nee
- Angel V. Peterchev
- Antonios Antonopoulos
- Staffan Norrga
- Thomas Weyh
- Kalle Ilves
- Stefan M. Goetz
- Lidong Zhang
Citations in the corpus
- Modular Multilevel Converter With Series and Parallel Module Connectivity: Topology and Control (2015, background): “First, field-effect transistors (FET) can replace IGBTs [36], [48].”
- Steady-State Analysis of Interaction Between Harmonic Components of Arm and Line Quantities of Modular Multilevel Converters (2012, background): “Since the M2C, which was first presented in [1]–[4], combines excellent output voltage waveforms with very high efficiencies [5], [6], it is ideal for high-voltage high-power applications such as high-voltage direct current transmission [5], [6], highpower motor drives [7]–[10], and electric railway”
- Modular Multilevel Converters for HVDC Applications: Review on Converter Cells and Functionalities (2015, unknown): “minimizing the cooling system requirement [155].”
- Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated (2012, background): “3-kV SiC JFET) if modularized circuits such as modular multilevel converter (M2C) are used for high-voltage high-power applications [38].”