Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

By Karel-Alexander N. Duerloo, Yao Li, Evan J. Reed. Nature Communications, 2014

957 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/99787a547355e15f758c780825ddcc9da300ef7b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Gang Zhang
2. Yong‐Wei Zhang
3. Yinghui Sun
4. Xuewen Wang
5. Kai Liu
6. Suhuai Wei
7. Fengnian Xia
8. Harold S. Park

In Materials Chemistry

1. Yong‐Wei Zhang
2. Gang Zhang
3. Rui Huang
4. Han Wang
5. Fengnian Xia
6. Teng Zhang
7. Huajian Gao
8. Harold S. Park

Citations in the corpus

• Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2016, background): “The structural phase transitions between a semiconducting and a metallic crystal structure can also happen in TMDCs [23].”
• Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier (2016, background): “For example, T′-MoX2 andWX2 are more stable than the correspondingT phases (35) and have lower FLs; the situation is similar for group 5 H-MX2 compared with their T phases.”
• Strain effects on thermoelectric properties of two-dimensional materials (2015, background): “[75] A similar transition was also predicted in other TMDs [76] and also MoS2 nanotubes [77].”
• A review on mechanics and mechanical properties of 2D materials—Graphene and beyond (2016, methodology): “The two lowest-energy crystal structures are often referred to as H and T [20,21,243].”