Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

By F. Haase, C. Hollemann, S. Schäfer, A. Merkle, M. Rienäcker, J. Krügener, R. Brendel, Robby Peibst. Solar Energy Materials and Solar Cells, 2018

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Abstract We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n -type POLO (and p -type POLO, respectively) samples a saturation current density of 2 fA cm −2 (6 fA cm −2 ) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm 2 on the solar cell with a contact area of only 3%.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c2b92edecf0d002446f8cd432b19b48e0288fdc3

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