Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

By W. Chang, Yen-Chao Lai, Tai-bor Wu, Sea-Fue Wang, Frederick T. Chen, M. Tsai. 2008

451 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/c25846b4ce88cdd2d398ad1a3cc3ce10f2a41d67

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Zhaoping Liu
2. Seunghyup Yoo
3. Xufeng Zhou

In Polymers and Plastics

1. Seunghyup Yoo

Citations in the corpus

• A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (2010, unknown): “, Pt/ZrO2/Pt [11], Pt/HfO2/Pt [12], Pt/ZnO/Pt [13], etc.”
• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[17] Chang WY, Lai YC, Wu TB, Wang SF, Chen F, Tsai MJ.”
• Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications (2009, background): “It is known that the HRS current in ZnO oxide films can be explained by Poole–Frenkel emissions [2] or by hopping conduction [3].”