300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

By M. Dvorak, C. Bolognesi, O. Pitts, S. Watkins. IEEE Electron Device Letters, 2001

162 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c168baa1e1e6b5810e2a24611df598afe9a903f5

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Citations in the corpus

• Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology (2002, background): “Further increase in data rates, bandwidth, and power savings would require transistors with simultaneously higher and . Experimental double HBTs on InP material systems with a GaAsSb base layer are reported with of 300 GHz and Mason power gain (U) of 300 GHz [ 2 ].”