Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

By B. Jagannathan, M. Khater, F. Pagette, J. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D. Greenberg, R. Groves and 11 more. IEEE Electron Device Letters, 2002

254 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0f7c47b45fb36b90167f9c427fb15f126cc4d74b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Ali Hajimiri

In Electrical and Electronic Engineering

1. Ali Hajimiri
2. Arun Natarajan
3. Duixian Liu

Citations in the corpus

• A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Transmitter and Local LO-Path Phase Shifting (2006, methodology): “BiCMOS process that had SiGe Bipolar transistors with an of 200 GHz [ 29 ].”