Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator.

By William M. J. Green, M. Rooks, L. Sekaric, Yurii A. Vlasov. Optics Express, 2007

759 citations recorded by the source corpus.

Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c138220ee5d4fc3ec691514eb14dbd5e3ce0fd23

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Citations in the corpus

Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology (2010, background): “In addition, over the past years, there have been many demonstrations of integrated active devices, including modulators [ 5 ], Germanium-based photodetectors, and even III–V integrated sources and detectors [6], [7].”
Ring Resonator Modulators in Silicon for Interchip Photonic Links (2013, neutral): “p-i-n diodes for modulation [15], [25].”
Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators (2008, background): “Table 1 summarizes the active device area, the total footprint on c-Si, dynamic driving voltage V pp , energy consumption per bit, and the operating spectrum width of a silicon Mach–Zehnder interferometer (MZI”