Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.

By E. Castro, K. Novoselov, S. Morozov, N. M. R. Peres, J. L. D. dos Santos, J. Nilsson, Francisco Guinea, A.K. Geim, A. C. Castro Neto. Physical Review Letters, 2006

1,572 citations recorded by the source corpus.

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c13103cd0265bf4777bb2a8a79bfbc91ea47315c

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In Atomic and Molecular Physics, and Optics

  1. N. M. R. Peres
  2. K. Novoselov
  3. E. Hwang
  4. E. Rossi
  5. S. Adam
  6. Francisco Guinea
  7. A.K. Geim
  8. A. C. Castro Neto

In Materials Chemistry

  1. N. M. R. Peres
  2. K. Novoselov
  3. E. Hwang
  4. E. Rossi
  5. Francisco Guinea
  6. S. Adam
  7. A. C. Castro Neto
  8. A.K. Geim

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