Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide
By M. Pu, Liu Liu, H. Ou, K. Yvind, J. Hvam. 2010
228 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c01a1100c37333b5bac6e9a12295dc40598df25d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- Xin Mu
- H. Fu
- Lirong Cheng
- Sailong Wu
Citations in the corpus
- Photonic Packaging: Transforming Silicon Photonic Integrated Circuits into Photonic Devices (2016, unknown): “A typical edge-coupler for a Si-PIC consists of an inverted taper (with a length of 100–300 μm) embedded in an integrated nitride-based spot-size-converter (SSC), or a post-process deposited polymer-based SSC, to increase the effective MFD of the on-PIC waveguide mode to approximately 3 × 3 μm [18,1”
- Edge Couplers in Silicon Photonic Integrated Circuits: A Review (2020, methodology): “In [89], due to the narrow tip width of the Si inverse taper (approximately 40 nm), EBL is applied to form the Si taper on the SOI wafer, and thermal oxidation is applied to grow a thin layer with 30 nm thickness of SiO2 on the Si taper.”