Interference enhancement of Raman signal of graphene
By Yingying Wang, Zhenhua Ni, Zexiang Shen, Haomin Wang, Yihong Wu. 2008
356 citations recorded by the source corpus.
Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To explain this Raman intensity anomaly, we show that in addition to the interference due to multiple reflection of the incident laser, the multiple reflection of the Raman signal inside the graphene layer must be also accounted for. Further studies of the role of SiO2 layer in the enhancement Raman signal of graphene are carried out and an enhancement factor of ∼30 is achievable, which is very significant for the Raman studies. Finally, we discuss the potential application of this enhancement effect on other ultrathin films and nanoflakes and a general selection criterion of capping layer and substrate is given.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/bf45fb43587453986aaa9827b3afce6b224f9f53
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Citations in the corpus
- Raman spectroscopy and imaging of graphene (2008, background): “Thus, the total Raman signal is a result of interference of transmitted laser followed by considering multi-reflection of Raman scattering light.([40]) Figure 5(c) shows the calculation results of Raman intensity of G band as a function of number of graphene/graphite layers.”
- Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization (2014, background): “Figure 3b shows that the Raman peak intensities of bulk phosphorus are smaller than those of multilayer phosphorene, similar to MoS2 and graphene, which is due to the effects of optical interference[25, 26].”
- Raman Spectroscopic Characterization of Graphene (2010, background): “The compressive stress on graphene was as high as ∼2.1 GPa after depositing SiO2 following annealing at 500◦C, and the stress on single-layer graphene can be fitted by the following formula: σ = −0.155 + (2.36 × 10−3)T + (5.17 × 10−6)T 2 (10) where σ is the compressive stress (GPa) and T is temperat”