Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
By Wanglin Lu, H. Nan, Jinhua Hong, Yuming Chen, Chen Zhu, Zheng Liang, Xiangyang Ma, Zhenhua Ni, C. Jin, Ze Zhang. Nano Reseach, 2014
628 citations recorded by the source corpus.
AbstractThere have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/90f9cd0ca688bb246bf1bceada948db455f0e999
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Citations in the corpus
- Black phosphorus as broadband saturable absorber for pulsed lasers from 1 μm to 2.7 μm wavelength (2015, neutral): “8 cm−1, which correspond to the BP’s out-of-plane vibration mode Ag 1 and in-plane vibration modes B2g and Ag (2), respectively [23].”
- Modulation of electronic and mechanical properties of phosphorene through strain (2014, positive): “In this regard, phosphorene, an atomically thin layer of the element phosphorus, which has a natural band gap, has been synthesized recently through mechanically cleaving bulk black phosphorus (BBP) followed by a plasma-assisted thinning process [6].”