Temperature-dependent contact resistances in high-quality polymer field-effect transistors

By B. Hamadani, D. Natelson. 2003

134 citations recorded by the source corpus.

Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) field-effect transistors with channel lengths from 400 nm up to 40 μm, from room temperature down to 77 K. For fixed gate voltage, the ratio of contact to channel resistance decreases with decreasing temperature. We compare this result with a recent model for organic semiconductor-metal contacts. Mobilities corrected for this contact resistance can approach 1 cm2/V s at room temperature and high gate voltages.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/bd61dab6640dd82f312e163aee96685618d3bfa4

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Polymers and Plastics

Citations in the corpus

Electrostatic modification of novel materials (2006, background): “For disordered organic semiconductors such as polymers, charge injection seems to be diffusion limited Hamadani and Natelson, 2004 .”