Electrostatic modification of novel materials

By C. Ahn, A. Bhattacharya, M. Di Ventra, J. Eckstein, C. Daniel Frisbie, Michael Gershenson, A. Goldman, I. Inoue, J. Mannhart, A. Millis and 3 more. 2006

326 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/56ada4ba07a30e7d48d89e319bf032a63d50db4d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. S. May

In Electrical and Electronic Engineering

1. V. Jai̇n
2. B. Kandasubramanian

In Materials Chemistry

1. V. Jai̇n
2. S. May
3. A. Bhattacharya
4. B. Kandasubramanian

Citations in the corpus

• Magnetic Oxide Heterostructures (2014, background): “The interfacial electronic configuration can also be modified by using electrostatic field-effect gating (41), providing a route for controlling interfacial magnetism with electric fields.”
• Functionalized graphene materials for hydrogen storage (2020, background): “External electric field applied on a material can modify its geometry, binding energy with other molecules, vibrational spectrum, and electronic properties [28, 143, 144].”