Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
By A. Neogi, Chang-won Lee, H. Everitt, T. Kuroda, A. Tackeuchi, Eli Yablonovitch. 2002
335 citations recorded by the source corpus.
Using time-resolved photoluminescence measurements, the recombination rate in an ${\mathrm{In}}_{0.18}{\mathrm{Ga}}_{0.82}\mathrm{N}/\mathrm{GaN}$ quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/bc25189184afa835696c3e139ee0af1c1bc371b4
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
- A. I. Zhmakin
- Mark L. Brongersma
- Wenshan Cai
- S. A. Maier
- Harry A. Atwater
- Stephen R. Quake
- A. Polman
- Carmel Majidi
In Condensed Matter Physics
Citations in the corpus
- Full-colour quantum dot displays fabricated by transfer printing (2011, background): “The silver nanoparticles effectively act as an electromagnetic antenna and generate near-field enhancement as well as enhancement of the local density of state”
- Surface-plasmon-enhanced light emitters based on InGaN quantum wells (2004, background): “, and lead to the enhancement of light emission by SP–QW couplin”
- Plasmonics for extreme light concentration and manipulation. (2010, background): “Spontaneous emission enhancements of quantum well semiconductor emitters in the vicinity of metal films were studied experimentall”
- Enhancement of light extraction from light emitting diodes (2011, methodology): “[304] with InGaN/GaN QW covered by a 8 nm silver film, the thickness of GaN cap layer was 12 nm.”