Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

By B. Voigtländer. 2001

342 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/bc234cbdda635e9897c62e97ade67cd0fe885725

Citations in the corpus

• Nanostructured surfaces: challenges and frontiers in nanotechnology (2004, neutral): “As I mentioned previously, the literature on the growth of Ge on Si(001) is very extensive and has been recently reviewed in depth by other authors (Voigtländer 2001, Brunner 2002).”
• Structural properties of self-organized semiconductor nanostructures (2004, neutral): “If the Ge coverage exceeds two monolayers, the 23N reconstruction further develops, creating a periodic sequence of 2D “patches” sM3N reconstruction: Voigtländer, 2001; Rastelli, von Kaenel, Albini, et al., 2003d. Detailed experimental and theoretical studies of the movement of Si-Ge dimers at a…”