Structural properties of self-organized semiconductor nanostructures

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Silicon quantum electronics (2012, background): “…on Si(001) via StranskiKrastanov growth resulting in huts, pyramids and domes with heights of 5-70 nm and lateral dimensions varying from 20-80 nm (Eaglesham and Cerullo, 1990; Katsaros et al., 2008; Medeiros-Ribeiro et al., 1998; Mo et al., 1990; Ross et al., 1999; Stangl et al., 2004), see Fig.”
Interfacing single photons and single quantum dots with photonic nanostructures (2013, methodology): “…are very sensitive to impurities and defects, quantum dots are fabricated by epitaxial methods such as molecular-beam epitaxy where heterostructures are grown with monolayer precision under ultra-high-vacuum conditions (Biasiol and Heun, 2011; Shchukin and Bimberg, 1999; Stangl et al., 2004).”
Colloquium: Reactive plasmas as a versatile nanofabrication tool (2005, methodology): “…for the appropriate choice of building units, we start with the structural considerations of the nanostructures being created and work backwards, taking into account the established theories of growth kinetics on the nanoscale sPoole and Owens, 2003; Shchukin et al., 2003; Stangl et al., 2004d.”