High dielectric constant oxides

By John Robertson. 2004

1,717 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bbdb7f243918c70e948888ac4a56f4851f7deec9

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In Electrical and Electronic Engineering

1. Bahniman Ghosh
2. M. Akram
3. Alexandra Boltasseva
4. Andrei V. Lavrinenko
5. Viktoriia E. Babicheva

Citations in the corpus

• Junctionless Tunnel Field Effect Transistor (2013, background): “9)), and the dielectric constants of different materials are taken from [14].”
• Transparent conducting oxides for electro-optical plasmonic modulators (2015, background): “New high-dielectric constant (high-k) oxides, such as lanthanum oxide (La2O3), titanium dioxide (TiO2), and strontium titanate (SrTiO3) are currently under investigation [187].”
• Electronic properties of hafnium oxide: A contribution from defects and traps (2016, neutral): “Presently, it is widely recognized that the most thermodynamically favourable defects in hafnium oxide are oxygen vacancies (VO) [1,4,5,36].”