Spin-polarized current switching of a Co thin film nanomagnet
By F. Albert, Jordan A. Katine, Robert A. Buhrman, D. Ralph. 2000
360 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/ba9be05177ad194aca7de6cdc0d25be078fb1864
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Nonlinear Auto-Oscillator Theory of Microwave Generation by Spin-Polarized Current (2009, background): “The effect of switching of the magnetization direction in a “free” magnetic layer under the influence of the spin-polarized current in a relatively low external magnetic field was studied in magnetic nano-pillars in [11], [27]–[29] and in magnetic nanowires in [30].”
- The emergence of spin electronics in data storage. (2007, background): “The first experimental demonstration that a Co/Cu/Co CPP spin-valve nanopillar can be reversibly switched by such “spin transfer effect” between its low (parallel) and high (antiparallel) magnetoresistance states was presented in 2000 [61].”
- Spintronics (2015, methodology): “DOI: http://dx.doi.org/10.1145/2663351”
- Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, methodology): “While it was immediately recognized that spin-transfer could form the basis of a write mechanism for magnetic memory [51, 75], the impedance and magnetoresistance of spin valve devices do not form an appropriate match to standard silicon technology.”