High‐Gain Phototransistors Based on a CVD MoS2 Monolayer

By Wenjing Zhang, Jing-Kai Huang, Chang-Hsiao Chen, Yung‐Huang Chang, Yu Cheng, Lain‐Jong Li. Advances in Materials, 2013

978 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ba82cc365740bbf6cb68bed331e63a65d475a1fa

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. A. Castellanos-Gómez
2. Teng Zhai
3. Qing Zhang
4. R. Ganatra

In Electrical and Electronic Engineering

1. A. Castellanos-Gómez
2. Teng Zhai
3. Huiqiao Li
4. Qing Zhang
5. J. Xiong
6. R. Ganatra

In Materials Chemistry

1. A. Castellanos-Gómez
2. Teng Zhai
3. Huiqiao Li
4. Qing Zhang
5. J. Xiong
6. R. Ganatra
7. Lin Gan
8. Hongwei Zhu

Citations in the corpus

• Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors (2017, background): “9 nm, corresponding to the monolayer [34].”