Giant piezoresistance effect in silicon nanowires
By R. He, Peidong Yang. Nature Nanotechnology, 2006
691 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/b8408be8191e7662c314fb6d3cac8a723a4497b4
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
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Citations in the corpus
- Graphene-based transparent strain sensor (2013, background): “change in response to a small applied strain [1–4].”
- Design principles and considerations for the ‘ideal’ silicon piezoresistive pressure sensor: a focused review (2014, background): “They observed an increase in the longitudinal piezoresistive coefficient with a decrease in the cross-sectional area of the nano-wires. after the paper by He and Yang (2006) on giant piezoresistance in p-type Si nano-wires a lot of work has been initiated in this direction.”
- Review: Semiconductor Piezoresistance for Microsystems (2009, background): “Yang et al. reported design and optimization of piezoresistive cantilevers for biosensing applications using finite element analysis, and analyzed the change in relative resistivity in the presence of a chemical reaction [213].”
- Thermoresistive Effect for Advanced Thermal Sensors: Fundamentals, Design Considerations, and Applications (2017, background): “Recent research has focused on the physical effect of Si at nano-scale levels since the carrier mobility of Si nanostructures significantly depends their surface-area-to-volume ratio [31].”
- Progress in the production and modification of PVDF membranes (2011, background): “[127] L.Y. Yu, Z.L. Xu, H.M. Shen, H. Yang, Preparation and characterization of PVDFSiO2 composite hollow fiber UF membrane by sol–gel method, Journal of Membrane Science 337 (1–2) (2009) 257–265.”
- Nanowire Transistor Performance Limits and Applications (2008, background): “This approach has led to the demonstration of singlecrystalline nanowire bridges [107] and nanoelectromechanical devices [112], [113].”