High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

By K. Edmonds, K. Wang, R. Campion, A. C. Neumann, N. Farley, B. Gallagher, C. Foxon. 2002

283 citations recorded by the source corpus.

We show that by annealing Ga1−xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature TC and conductivity can be obtained. TC is unambiguously determined to be 118 K for Mn concentration x=0.05, 140 K for x=0.06, and 120 K for x=0.08. We also identify a clear correlation between TC and the room temperature conductivity. The results indicate that Curie temperatures significantly in excess of the current values are achievable with improvements in growth and post-growth annealing conditions.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b805312cba34894815e45184705958b52eb785ab

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In Electronic, Optical and Magnetic Materials

1. T. Dietl
2. T. Jungwirth
3. Allan H. MacDonald
4. J. Sinova
5. Jan Kucera
6. J. Masek
7. Hideo Ohno

In Materials Chemistry

1. T. Dietl
2. J. Sinova
3. T. Jungwirth
4. Allan H. MacDonald
5. J. Masek
6. Jan Kucera
7. J. Wunderlich
8. K. Olejník

Citations in the corpus

• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “Since there is no apparent deficit of p compared to NMn, and since the interstitial Mn impurity (Edmonds et al., 2002; Máca and Mašek, 2002; Yu et al., 2002) compensates one local moment but two holes it can be concluded that interstitial Mn, which is the key contributor to extrinsic disorder, is…”
• Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “The metastable nature of these impurities is manifested by the substantial decrease in their density upon post-growth annealing at temperatures very close to the growth temperatures (Chiba et al., 2003a; Edmonds et al., 2002a; Ku et al., 2003; Stone et al., 2003; Yu et al., 2002).”
• A ten-year perspective on dilute magnetic semiconductors and oxides. (2010, background): “or by increasing the concentration of compensating donor”