Internal photoemission of electrons and holes from (100)Si into HfO2

By V. Afanas’ev, A. Stesmans, F. Chen, X. Shi, S. Campbell. 2002

184 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b7dad80ecf00229e64b7023257d06a1f34b2124c

Citations in the corpus

• Electronic properties of hafnium oxide: A contribution from defects and traps (2016, unknown): “A banddiagramof a p-Si/HfO2/Ni structure suggested bymeasured photoemission andphotoconduction data [2] is shown in Fig.”