Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

By M. Amani, M. Chin, A. G. Birdwell, T. O'Regan, S. Najmaei, Zheng Liu, Pulickel M. Ajayan, J. Lou, Madan Dubey. 2013

226 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b7b8a5816f4e3a4e317041e37ac0316869b952bd

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In Electrical and Electronic Engineering

1. Filippo Giubileo
2. A. Di Bartolomeo

In Materials Chemistry

1. Filippo Giubileo
2. Giuseppe Luongo
3. L. Iemmo
4. Tobias Foller
5. L. Genovese
6. M. Schleberger
7. A. Di Bartolomeo

Citations in the corpus

• Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “Band diagram of the MoS2/SiO2/Si structure (Si is treated as degenerate), at zero (a), positive (b) and negative (c) gate bias, showing that a negative Vgs favors the storage of positive charge at the MoS2/SiO2 interface.”