Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

By Tao Wu, A. Bur, Kin L. Wong, Ping Zhao, C. Lynch, P. Amiri, Kang L. Wang, G. Carman. 2011

164 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b7429dfb50a8a32453913328fa0b9598ff310e56

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang

In Electronic, Optical and Magnetic Materials

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang

In Materials Chemistry

1. Kang L. Wang
2. P. Amiri

Citations in the corpus

• Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, methodology): “For ultra-low power spin-based memories beyond STT-RAM, this paper will discuss two approaches: first, we will consider magnetoelectric effects which manipulate the magnetization by electric fields (or voltages) instead of the current-driven mechanisms [13, 14].”