Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

By M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, Hideo Hosono. 2002

251 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/b739b295ef240fddc38870b991535157442cae55

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Citations in the corpus

• Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, background): “Epitaxial films of β-Ga2O3 have been grown using various vapor phase techniques, including metalorganic chemical vapor deposition (MOCVD) [14], molecular beam epitaxy (MBE) [1,15–19], pulsed-laser deposition (PLD) [20], halide vapor phase epitaxy (HVPE) [21], and MIST epitaxy [22].”