GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

By H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. Chang, Richard A. Soref, Greg Sun. 2013

137 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b64054e4033b16ba5d0216a3194eb6834b09dc45

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Richard A. Soref
2. Greg Sun

In Electrical and Electronic Engineering

1. Richard A. Soref

Citations in the corpus

• Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019, background): “3 development is shown in Table I.(13-40) To fully understand the potential of GeSn detectors, a comprehensive study regarding Sn-compositional device performance, particular with higher Sn composition (higher than 10%), is highly desirable.”