Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

By Huong Tran, T. Pham, J. Margetis, Yiyin Zhou, Wei Dou, P. Grant, Joshua M. Grant, Sattar Alkabi, Greg Sun, Richard A. Soref and 6 more. ACS Photonics, 2019

198 citations recorded by the source corpus.

This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/09c6130b237436a6e8b80d93c1c2b32e0cbe4bcc